preliminary data sheet repetitive avalanche and dv/dt rated mosfet transistor p - channel 2N7524 60 volt, 0.015 w w , rad hard mosfet r5 package: smd - 2 product summar y hex size technology bv dss r ds (on) i d 6 rad hard - 60v 0.015 w - 75*a absolute maximum ratings parameter value units i d @ v gs = - 12v, t c = 25 c continuous drain current - 75* a i d @ v gs = - 12v, t c = 100 c continuous drain current - 58 a p d @ t c = 25 c power dissipation 300 w v gs gate - to - source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current - 75 a e ar repetitive avalanche energy 30 mj t j operating junction range - 55 to 150 c pre - irradiation electrical characterist ics @ t j = 25 c (unless otherwise specified) parameter min typ. max units test conditions bv dss drain - to - source breakdown voltage - 60 - - v v gs =0v, i d = - 1.0ma r ds(on) static drain - to - source on - state resistance - - 0.015 w v gs = - 12v, i d = - 58a v gs (th) gate threshold voltage - 2.0 - - 4.0 v v ds =v gs , i d = - 1.0ma i dss zero gate voltage drain current - - - 10 m a v ds = - 48v, v gs =0v i dss zero gate voltage drain current - - - 25 m a v ds = - 48v, t j =125 c i gss gate - to - source leakage forward - - - 100 na v gs = - 20v i gss gate - to - source leakage reverse - - 100 na v gs =20v qg total gate charge - - 140 nc v gs = - 12v, i d = - 45a thermal resistance parameter min typ. max units test conditions r thjc junction - to - case - - 0.42 c/w * c urrent is limited by internal wire size 01/23/01
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